Tight-binding calculations of SiGe alloy nanocrystals in SiO2 matrix
نویسندگان
چکیده
منابع مشابه
Tight-Binding based SiGe Band Structure Calculations and Implication on Transport
This work presents a comprehensive analysis of the SiGe band structure using a TightBinding based approach within the virtual crystal approximation. We analyze the material properties of bulk relaxed SiGe and biaxially compressed strained systems. The simulation approach has been benchmarked against experimental data wherever possible. We further investigate the effect of process induced uniaxi...
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Multilayers of SiGe nanocrystals embedded in an oxide matrix have been fabricated by low-pressure chemical vapor deposition of SiGe and Si02 onto Si wafers (in a single run at 390 °C and 50mTorr, using GeH4, Si2H6 and 02) followed by a rapid thermal annealing treatment to crystallize the SiGe nanoparticles. The main emission band is located at 400 nm in both cathodoluminescence and photolumines...
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ژورنال
عنوان ژورنال: Journal of Physics: Condensed Matter
سال: 2019
ISSN: 0953-8984,1361-648X
DOI: 10.1088/1361-648x/ab2963